Method for producing SOI wafer
US8268705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2007 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Sep 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×1012 atoms/cm2 or more and less than 1×1015 atoms/cm2. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.