High current density power field effect transistor
US8269263B2 · kind B2 · utility
6Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2008 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
An ultra-short channel hybrid power field effect transistor (FET) device lets current flow from bulk silicon without npn parasitic. This device does not have body but still have body diode with low forward voltage at high current rating. The device includes a JFET component, a first accumulation MOSFET disposed adjacent to the JFET component, and a second accumulation MOSFET disposed adjacent to the JFET component at the bottom of the trench end, or a MOSFET with an isolated gate connecting the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.