Method for film formation, apparatus for film formation, and computer-readable recording medium
US8273409B2 · kind B2 · utility
0Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2011 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Jun 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.