Semiconductor device and method of forming WLCSP structure using protruded MLP
US8273604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2011 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Mar 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second vias disposed through the encapsulant to expose first contact pads. The first contact pads are on upper surfaces of the first semiconductor die. The semiconductor device can include conductive pillars that fill the first vias, and first conductive metal vias (CMVs) that fill the second vias. The conductive pillar can include a first conductive material, and the first CMVs can be in contact with the first contact pads. The semiconductor device can include a conductive layer disposed over the encapsulant. The conductive layer can electrically connect one of the first CMVs with one of the conductive pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.