Process for the transfer of a thin layer formed in a substrate with vacancy clusters
US8273636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2006 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Dec 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming semiconductor structures comprising a layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor-on-insulator (SeOI) structure can be formed by a method comprising:—providing a donor substrate having a first density of vacancy clusters;—providing an insulating layer; —transferring a thin layer from the donor substrate to a support substrate with the insulating layer thereon;—curing the transferred thin layer to reduce the first density of vacancy clusters to a second density; and being characterized in that the step of providing an insulating layer comprises providing an oxygen barrier layer to be in contact with the transferred thin layer, the oxygen barrier layer limiting diffusion of oxygen toward the thin layer during the curing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.