Punch-through diode steering element
US8274130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2009 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Sep 25, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.