Method of damaged low-k dielectric film layer removal
US8277675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2006 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Feb 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.