Patent · US Active

Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film

US8277694B2 · kind B2 · utility

5Cited by
4References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 4, 2008
Grant dateOct 2, 2012
Priority date
Expiry dateJun 10, 2029

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC04B2235/77
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.