Film formation method and film formation apparatus
US8277889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2008 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Dec 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.