Method for suppressing particle generation during semiconductor manufacturing
US8277891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2010 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Aug 19, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus during a film formation process for forming a film on a semiconductor substrate. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. Ozone is supplied, as a precoat gas, into the reaction tube during the precoating process by a nozzle of a different type and/or position from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during the film formation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.