Selective capping of copper
US8278216B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2006 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods of selectively depositing refractory metal and metal nitride cap layers onto copper lines inlaid in a dielectric layer. The methods result in formation of a cap layer on the copper lines without significant formation on the surrounding dielectric material. The methods typically involve exposing the copper lines to a nitrogen-containing organo-metallic precursor and a reducing agent under conditions that the metal or metal nitride layer is selectively deposited. In a particular embodiment, an amino-containing tungsten precursor is used to deposit a tungsten nitride layer. Deposition methods such as CVD or ALD may be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.