Fabricating current-confining structures in phase change memory switch cells
US8278641B2 · kind B2 · utility
6Cited by
6References
7Claims
0Family size
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Key dates
| Filing date | Dec 23, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | May 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
In one or more embodiments, methods of fabricating current-confining stack structures in a phase change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension memory chalcogenide are shown. In another embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension middle electrode heaters are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.