High speed detection of shunt defects in photovoltaic and optoelectronic devices
US8278937B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2010 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Apr 10, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.