Nonvolatile memory device and method of programming the same
US8279675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Dec 25, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device including a bit line voltage supply unit configured to supply a power source voltage, a second voltage in which a second reference voltage has been subtracted from a third reference voltage, or a third voltage in which a first reference voltage has been subtracted from the third reference voltage according to data stored in a first latch unit, a second latch unit, and a third latch unit included in a page buffer, and a bit line voltage setting unit configured to transfer a voltage of 0 V or an output voltage of the bit line voltage supply unit to a bit line according to the data stored in the first, second, and third latch units.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.