Patent · US Active

RF shutter

US8281739B2 · kind B2 · utility

3Cited by
6References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 29, 2008
Grant dateOct 9, 2012
Priority date
Expiry dateJul 14, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/0206
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.