Method of making ultrahigh density vertical NAND memory device

US8283228B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventor

• Johann Alsmeier · San Jose, US

Key dates

• Filing date: May 9, 2012
• Grant date: Oct 9, 2012
• Expiry date: May 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/693

Abstract

Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.