Process for growth of low dislocation density GaN
US8283239B2 · kind B2 · utility
6Cited by
10References
17Claims
0Family size
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Key dates
| Filing date | Dec 15, 2006 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Dec 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 106 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.