Pierre Gibart
8Patents
5h-index
7Co-inventors
48Inventor score
Filing activity: Jul 7, 2000 → May 18, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6325850A | Method for producing a gallium nitride epitaxial layer | Electricity | 140 | Expired |
| US6802902B2 | Process for producing an epitaxial layer of gallium nitride | Electricity | 46 | Expired |
| US7118929B2 | Process for producing an epitaxial layer of gallium nitride | Chemistry; Metallurgy | 28 | Expired |
| US7445673B2 | Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof | Electricity | 11 | Expired |
| US8283239B2 | Process for growth of low dislocation density GaN | Electricity | 6 | Active |
| US7560296B2 | Process for producing an epitalixal layer of galium nitride | Electricity | 4 | Active |
| US7455729B2 | Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density | Electricity | 4 | Expired |
| US8030101B2 | Process for producing an epitaxial layer of galium nitride | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.