Selective wet etching of hafnium aluminum oxide films
US8283258B2 · kind B2 · utility
2Cited by
47References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2007 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Jan 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.