Patent · US Active

Method to enhance charge trapping

US8283265B2 · kind B2 · utility

2Cited by

2References

10Claims

0Family size

Assignee

Varian Semiconductor Equipment Associates, Inc. · US

Inventors

Deepak A. Ramappa · Dallas, US
Kyu-Ha Shim · Andover, US

Key dates

Filing date	Dec 17, 2009
Grant date	Oct 9, 2012
Priority date	—
Expiry date	Oct 26, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/037

Abstract

Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.