Flat lower bottom electrode for phase change memory cell

US8283650B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• MACRONIX INTERNATIONAL CO., LTD. · TW

Inventors

• Matthew J. Breitwisch · Yorktown Heights, US
• Eric A. Joseph · White Plains, US
• Chung H. Lam · Williston, US
• Hsiang-Lan Lung · Ardsley, US
• Alejandro G. Schrott · New York, US

Key dates

• Filing date: Aug 28, 2009
• Grant date: Oct 9, 2012
• Expiry date: Sep 11, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of conductive contacts, patterning, a via having a low aspect ratio such that a depth of the via is less than a width thereof, to a contact surface of the substrate corresponding to each of the array of conductive contacts to be connected to access circuitry, etching the dielectric layer and depositing electrode material over the etched dielectric layer and within each via, and planarizing the electrode material to form a plurality of lower bottom electrodes on each of the conductive contacts.