Patent · US Active

Seal ring structure with metal pad

US8283754B2 · kind B2 · utility

5Cited by
0References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 1, 2010
Grant dateOct 9, 2012
Priority date
Expiry dateDec 8, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.