Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8284810B1 · kind B1 · utility
185Cited by
63References
22Claims
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Key dates
| Filing date | Aug 3, 2009 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Aug 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.