Plasma processing method and plasma processing apparatus
US8287750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2010 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Jan 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/004
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.