TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
US8288237B2 · kind B2 · utility
5Cited by
9References
14Claims
0Family size
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Key dates
| Filing date | Aug 14, 2009 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Jul 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.