Method for fabricating semiconductor device
US8288263B2 · kind B2 · utility
7Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2010 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Aug 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a multilayer, forming a plurality of patterns by etching the multilayer and a portion of the substrate, forming a supporter to support the plurality of patterns, and removing residues formed during the etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.