Quantum-dot device and position-controlled quantum-dot-fabrication method
US8288754B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 11, 2009 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | May 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/402
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a method for position-controlled fabrication of a semiconductor quantum dot, the method comprising: providing a substrate (102) of a substrate material; depositing a sacrificial layer (108) of a sacrificial material; depositing an active layer (110) of a semiconductive active material on the sacrificial layer, wherein the substrate, sacrificial and active materials are chosen such that the sacrificial layer is selectively removable with respect to the substrate and the active layer, depositing and patterning a mask layer on the active layer so as to define desired quantum-dot positions in lateral directions, fabricating a lateral access to the sacrificial layer in regions underneath the patterned mask layer; selectively removing, with respect to the substrate and the active layer, the sacrificial layer from underneath the active layer at least under the patterned mask layer; and etching the active layer under the patterned mask layer from underneath the active layer so as to assume a desired quantum-dot shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.