Gregory Bidal
9Patents
2h-index
13Co-inventors
40Inventor score
Filing activity: Jan 20, 2009 → Nov 18, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8288754B2 | Quantum-dot device and position-controlled quantum-dot-fabrication method | Electricity | 5 | Active |
| US8394704B2 | Method for fabricating a dual-orientation group-IV semiconductor substrate | Electricity | 3 | Active |
| US8912067B2 | Method for manufacturing MOS transistors with different types of gate stacks | Electricity | 2 | Active |
| US9786755B2 | Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit | Electricity | 2 | Active |
| US9530686B1 | MOS transistor and method of manufacturing the same | Electricity | 1 | Active |
| US9876032B2 | Method of manufacturing a device with MOS transistors | Electricity | 0 | Active |
| US9941416B2 | MOS transistor and method of manufacturing the same | Electricity | 0 | Active |
| US9117876B2 | Integrated circuit comprising an isolating trench and corresponding method | Electricity | 0 | Active |
| US8829622B2 | Integrated circuit comprising an isolating trench and corresponding method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.