Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses
US8288811B2 · kind B2 · utility
23Cited by
16References
47Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2010 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Nov 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.