Apparatuses and methods for atomic layer deposition

US8291857B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Hyman Lam · San Jose, US
• Bo Zheng · Sunnyvale, US
• Hua Ai · Tracy, US
• Michael S. Jackson · Sunnyvale, US
• Xiaoxiong Yuan · Cupertino, US
• Hou Gong Wang · Pleasanton, US
• Salvador P. Umotoy · Pittsburg, US
• Sang Ho Yu · Cupertino, US

Key dates

• Filing date: Jun 30, 2009
• Grant date: Oct 23, 2012
• Expiry date: Jun 11, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T137/87265
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.