Thinned semiconductor wafer and method of thinning a semiconductor wafer
US8292690B2 · kind B2 · utility
10Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 8, 2008 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Aug 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thinned semiconductor wafer and a method for thinning the semiconductor wafer. A semiconductor wafer is thinned from its backside to form a cavity in a central region of the backside of the semiconductor wafer. Forming the cavity also forms a ring support structure in a peripheral region of the semiconductor wafer. The ring support structure has an inner edge and an outer edge. The inner edge may be beveled or have a stepped shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.