Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials
US8293599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2009 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Jan 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A semiconductor device that has a dual gate having different work functions is simply formed by using a selective nitridation. A gate insulating layer is formed on a semiconductor substrate including a first region and a second region, on which devices having different threshold voltages are to be formed. A diffusion inhibiting material is selectively injected into the gate insulating layer in one of the first region and the second region. A diffusion layer is formed on the gate insulating layer. A work function controlling material is directly diffused from the diffusion layer to the gate insulating layer using a heat treatment, wherein the gate insulting layer is self-aligned capped with the selectively injected diffusion inhibiting material so that the work function controlling material is diffused into the other of the first region and the second region. The gate insulating layer is entirely exposed by removing the diffusion layer. A gate electrode layer is formed on the exposed gate insulating layer. A first gate and a second gate having different work functions are respectively formed in the first region and the second region by etching the gate electrode layer and the gate i…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.