Intermediate product for a multichannel FET and process for obtaining an intermediate product

US8293608B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Marius Orlowski · Meylan, FR
• Andreas Wild · Weimar, DE

Key dates

• Filing date: Feb 8, 2008
• Grant date: Oct 23, 2012
• Expiry date: Oct 27, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6748

Abstract

An intermediate product in the manufacture of a vertical multiple-channel FET device containing alternating —Si—[(SiGe)—Si]u- stacked layers is shown, as well as a process for selectively etching the SiGe layers in such a stacked layer system, and products obtained from such selective etching. Differential Ge content is added to the successive layers to provide uniform removal of the sacrificial SiGe layers.