Method of making multiple implantations in a substrate

US8293620B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

• Thomas Signamarcheix · Grenoble, FR
• Chrystel Deguet · Meylan, FR
• Frédéric Mazen · Grenoble, FR

Key dates

• Filing date: Jul 7, 2009
• Grant date: Oct 23, 2012
• Expiry date: Jul 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.