Reactive site deactivation against vapor deposition
US8293658B2 · kind B2 · utility
94Cited by
24References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | May 5, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D5/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.