Optical device structure using GaN substrates and growth structures for laser applications
US8294179B1 · kind B1 · utility
182Cited by
40References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Oct 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device has a structured active region configured for selected wavelengths of light emissions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.