Patent · US Active

Interference systems for microlithgraphic projection exposure systems

US8294991B2 · kind B2 · utility

2Cited by

10References

24Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Ralf Mueller · Germersheim, DE
Toralf Gruner · Hennef (Sieg), DE
Michael Totzeck · Schwäbisch Gmünd, DE
Heiko Feldmann · Aalen, DE
Hans-Jochen Paul · Aalen, DE

Key dates

Filing date	Jan 14, 2010
Grant date	Oct 23, 2012
Priority date	—
Expiry date	Aug 16, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70566
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optical system of a microlithographic projection exposure apparatus permits comparatively flexible and fast influencing of the intensity distribution and/or the polarization state. The optical system includes at least one layer system that is at least one-side bounded by a lens or a mirror. The layer system is an interference layer system of several layers and has at least one liquid or gaseous layer portion with a maximum thickness of one micrometer (μm), and a manipulator for manipulation of the thickness profile of the layer portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.