Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films
US8298616B2 · kind B2 · utility
1Cited by
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19Claims
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Key dates
| Filing date | Jul 24, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Mar 16, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.