Low temperature deposition of silicon-containing films
US8298628B2 · kind B2 · utility
51Cited by
13References
4Claims
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Key dates
| Filing date | Jun 2, 2009 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | May 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.