Patent · US Active

Semiconductor devices and methods of manufacturing thereof

US8298730B2 · kind B2 · utility

0Cited by

7References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

O Seo Park · Hopewell Junction, US
Sun-Oo Kim · Hopewell Junction, US
Klaus Herold · Poughquag, US

Key dates

Filing date	Mar 25, 2011
Grant date	Oct 30, 2012
Priority date	—
Expiry date	Mar 25, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor devices, methods of manufacturing thereof, lithography masks, and methods of designing lithography masks are disclosed. In one embodiment, a semiconductor device includes a plurality of first features disposed in a first material layer. At least one second feature is disposed in a second material layer, the at least one second feature being disposed over and coupled to the plurality of first features. The at least one second feature includes at least one void disposed between at least two of the plurality of first features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.