Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure
US8298885B2 · kind B2 · utility
34Cited by
2References
16Claims
0Family size
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Key dates
| Filing date | Apr 14, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.