Structure and method for forming isolation and buried plate for trench capacitor
US8298908B2 · kind B2 · utility
1Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.