Semiconductor device and method for fabricating the same
US8298909B2 · kind B2 · utility
0Cited by
5References
24Claims
0Family size
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Key dates
| Filing date | Dec 27, 2007 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Oct 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.