Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method
US8298926B2 · kind B2 · utility
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3References
10Claims
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Key dates
| Filing date | Dec 27, 2007 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Mar 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.