Footing reduction using etch-selective layer
US8298951B1 · kind B1 · utility
501Cited by
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11Claims
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Key dates
| Filing date | Apr 13, 2011 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Jul 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming side spacers upwardly extending from a substrate, includes: providing a template constituted by a photoresist formed on and in contact with an etch-selective layer laminated on a substrate; anisotropically etching the template in a thickness direction with an oxygen-containing plasma to remove a footing of the photoresist and an exposed portion of the underlying layer; depositing a spacer film on the template by atomic layer deposition (ALD); and forming side spacers using the spacer film by etching. The etch-selective layer has a substantially lower etch rate than that of the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.