Device made of single-crystal silicon

US8298962B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Arnd Kaelberer · Neckargemünd, DE
• Helmut Baumann · Gomaringen, DE
• Roland Scheuerer · Reutlingen, DE
• Heribert Weber · Leverkusen, DE

Key dates

• Filing date: Sep 28, 2010
• Grant date: Oct 30, 2012
• Expiry date: Oct 22, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30608
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.