Semiconductor structures having improved contact resistance
US8299455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2007 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Self-assembled polymer technology is used to form at least one ordered nanosized pattern within material that is present in a conductive contact region of a semiconductor structure. The material having the ordered, nanosized pattern is a conductive material of an interconnect structure or semiconductor source and drain diffusion regions of a field effect transistor. The presence of the ordered, nanosized pattern material within the contact region increases the overall area (i.e., interface area) for subsequent contact formation which, in turn, reduces the contact resistance of the structure. The reduction in contact resistance in turn improves the flow of current through the structure. In addition to the above, the inventive methods and structures do not affect the junction capacitance of the structure since the junction area remains unchanged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.