Constructions comprising hafnium oxide and/or zirconium oxide
US8299462B2 · kind B2 · utility
3Cited by
18References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2011 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Oct 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.