Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8299473B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Nov 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
Abstract
A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.