Semiconductor device having hetero junction
US8299498B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Apr 7, 2008 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Nov 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/635
Abstract
A semiconductor device 10 is provided with a first hetero junction 40b configured with two types of nitride semiconductors having different bandgap energy from each other, a second hetero junction 50b configured with two types of nitride semiconductors having different bandgap energy from each other, and a gate electrode 58 facing the second hetero junction 50b. The second hetero junction 50b is configured to be electrically connected to the first hetero junction 40b. The first hetero junction 40b is a c-plane and the second hetero junction 50b is either an a-plane or an m-plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.